Параметры и характеристики. Наименование: FGH60N60SMD. Тип транзистора: IGBT. Тип управляющего канала: N. Pcⓘ - Максимальная рассеиваемая мощность: 600 W. |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V. |Vge|ⓘ - Максимально …
Параметры и характеристики. Наименование: IXGH60N60. Тип транзистора: IGBT. Тип управляющего канала: N. Pcⓘ - Максимальная рассеиваемая мощность: 300 W. |Vce|ⓘ …
Features. • Maximum Junction Temperature: TJ = 175°C. • Positive Temperature Co−efficient for easy Parallel Operating. • High Current Capability. • Low Saturation Voltage: VCE (sat) = 1.9 V (Typ.) @ IC = 60 A. • High Input …
ixgn60n60 - igbt справочник. Даташиты. Аналоги. Параметры и характеристики. Наименование: ixgn60n60 Тип транзистора: igbt Тип управляющего канала: n pcⓘ - …
FGH60N60SMD. Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, …
Features. High current capability. Low saturation voltage: VCE(sat)=2.3V @ IC = 60A. High input impedance. Fast switching. RoHS compliant. Applications. • Induction Heating, UPS, SMPS, …
60N60 is 600V, Insulated-gate bipolar transistor. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current …
FGH60N60SFD. Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
IXFN 60N60 Symbol Test Conditions Characteristic Values (T J = 25 C, unless otherwise specified) min. typ. max. g fs V DS = 15 V; I D = 0.5 • I D25, pulse test 40 60 S C iss 15000 pF …
The 60N60 is a high-power IGBT (Insulated-Gate Bipolar Transistor) designed for efficient performance in a wide variety of applications, including solar inverters, UPS systems, welders, …
IXGH60N60 Transistor Equivalent Substitute - IGBT Cross-Reference Search. IXGH60N60 Datasheet (PDF) ..1. Size:94K ixys. ixgh60n60.pdf. VCES = 600 VUltra-Low VCE (sat) IGBT …
60N60 Product details. Features. International standard package SOT-227B. Aluminium nitride isolation. - high power dissipation. Isolation voltage 3000 V~ Very high current, fast switching IGBT. Low VCE (sat) for minimum on-state …
Part #: 60N60. Description: Ultra-Low VCE (sat) IGBT. File Size: 67.35 Kbytes. Manufacturer: IXYS Corporation.
Параметры и характеристики 60n60 . Наименование: FGH60N60SFD (60N60 , FGH60N60) Тип управляющего канала: N-Channel
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