This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low …
Part #: STGD18N40LZ. Download. File Size: 636Kbytes. Page: 18 Pages. Description: EAS 180 mJ - 400 V - internally clamped IGBT. Manufacturer: STMicroelectronics.
STGD18N40LZ Product details. Description. This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and …
Description. This application-specific IGBT utilizes the most advanced PowerMESHTM technology. The built-in Zener diodes between gate-collector and gate-emitter provide …
This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low …
Description. This application-specific IGBT utilizes the most advanced PowerMESHTM technology. The built-in Zener diodes between gate-collector and gate-emitter provide …
Features and benefits. * Designed for automotive applications and AEC-Q101 qualified. * 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH. * ESD gate-emitter protection.
Part #: GD18N40LZ. Description: Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ. File Size: 466.49 Kbytes. Manufacturer: STMicroelectronics.
TO220AB : в линейках 50 шт — Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
![STGD18N40LZT4, Транзистор IGBT 420В 25А [DPAK] - chipdip](https://ae04.alicdn.com/kf/S791c4376ac2340f3aefc74c586493e89F.png_480x480.png)
Технические параметры. Brand: STMicroelectronics. Collector- Emitter Voltage VCEO Max: 420 V. Collector-Emitter Saturation Voltage: 1.35 V. Configuration: Single.
May 2008 Rev 3 1/18 18 STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features AEC Q101 compliant 180 mJ of avalanche energy @ T C = 150 °C, L = 3 mH …
Marking: GD18N40LZ. Part #: STGD18N40LZT4. Download. File Size: 466Kbytes. Page: 16 Pages. Description: Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ. …
Описание. STGD18N40LZ-1 транзистор IGBT. Тип: IGBT. Маркировка: GD40N80LZ. Напряжение КЭ: 400В. Ток коллектора: 25А. Мощность рассеивания: 125Вт. Корпус: TO …
GD18N40LZ Datasheet. Part #: GD18N40LZ. Datasheet: 466Kb/16P. Manufacturer: STMicroelectronics. Description: Automotive-grade 390 V internally clamped IGBT ESCIS 180 …
Транзистор gd18n40lz, 2 шт купить в интернет-магазине ozon по низким ценам! Бесплатная доставка🚚 Фото Скидки Рассрочка и настоящие отзывы (1182801022)
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